general description the AAT9560 30v n-channel power mosfet is a member of analogictech?'s trenchdmos? product family. using the ultra-high density propri- etary trenchdmos technology, this product demonstrates high power handling and small size. the sc70jw-8 package was specially designed for maximum silicon die area with minimum package footprint. this enables new breakthroughs in power density with conventional surface mount technolo- gy. the sc70jw-8 has an innovative j-type pin design which allows its extra-wide body to fit direct- ly onto the industry-standard sc70 footprint. applications ? cellular & cordless telephones ? battery-powered portable equipment ? laptop computers ? hand held computers ? digital cameras ? dc/dc converters features ?v ds(max) = 30v ?i d(max) = 6.6a @ 25c ? low r ds(on) : ? 24 m ? @ v gs = 10v ? 40 m ? @ v gs = 4.5v sc70jw-8 package dddd sssg top view 1234 8765 AAT9560 30v n-channel power mosfet preliminary information 9560.2003.08.0.91 1 absolute maximum ratings (t a =25c unless otherwise noted) thermal characteristics symbol description typ max units r ja junction-to-ambient steady state 1 100 120 r ja2 junction-to-ambient t<5 seconds 1 61 73.5 c/w r jf junction-to-foot 1 33 40 symbol description value units v ds drain-source voltage 30 v v gs gate-source voltage 20 i d continuous drain current @ t j =150c 1 t a = 25c 6.6 t a = 70c 5.2 a i dm pulsed drain current 32 i s continuous source current (source-drain diode) 1 1.5 p d maximum power dissipation 1 t a = 25c 1.7 w t a = 70c 1.0 t j , t stg operating junction and storage temperature range -55 to 150 c
electrical characteristics (t j =25c unless otherwise noted) notes: 1. based on thermal dissipation from junction to ambient while mounted on a 1? x 1? pcb with optimized layout. a 5 second puls e on a 1? x 1? pcb approximates testing a device mounted on a large multi-layer pcb as in many applications. r jf + r fa = r ja where the foot thermal reference is defined as the normal solder mounting surface of the device?s leads. r jf is guaranteed by design, however r ca is determined by the pcb design. actual maximum continuous current is limited by the application?s design. 2. pulse test: pulse width = 300 s 3. guaranteed by design. not subjected to production testing. symbol description conditions min typ max units dc characteristics bv dss drain-source breakdown voltage v gs =0v, i d =250a 30 v r ds(on) drain-source on-resistance 2 v gs =10v, i d =6.6a 18 24 m ? v gs =4.5v, i d =5.1a 30 40 i d(on) on-state drain current 2 v gs =10v, v ds =5v (pulsed) 32 a v gs(th) gate threshold voltage v gs =v ds , i d =250a 1.0 v i gss gate-body leakage current v gs =20v, v ds =0v 100 na i dss drain source leakage current v gs =0v, v ds =30v 1 a v gs =0v, v ds =24v, t j =70c 5 g fs forward transconductance 2 v ds =5v, i d =6.6a 12 s dynamic characteristics 3 q g total gate charge v ds =15v, i d =12.5a, v gs =5v 8.6 13 nc q gt total gate charge v ds =15v, i d =12.5a, v gs =10v 16 24 nc q gs gate-source charge v ds =15v, i d =12.5a, v gs =10v 2.5 nc q gd gate-drain charge v ds =15v, i d =12.5a, v gs =10v 2.8 nc t d(on) turn-on delay v dd =15v, v gs =10v, r d =2.8 ? , r g =6 ? 2.5 ns t r turn-on rise time v dd =15v, v gs =10v, r d =2.8 ? , r g =6 ? 2.6 ns t d(off) turn-off delay v dd =15v, v gs =10v, r d =2.8 ? , r g =6 ? 12 ns t f turn-off fall time v dd =15v, v gs =10v, r d =2.8 ? , r g =6 ? 5.7 ns source-drain diode characteristics v sd source-drain forward voltage 2 v gs =0, i s =6.6a 1.3 v i s continuous diode current 2 1.5 a AAT9560 30v n-channel power mosfet 2 9560.2003.08.0.91
typical characteristics (t j = 25oc unless otherwise noted) gate charge characteristics 0 2 4 6 8 10 04 8121620 charge (nc) gate voltage (v) source to drain voltage 0.1 1 10 100 0.4 0.6 0.8 1 1.2 v sd (v) i sd (a) transfer 0 5 10 15 20 25 30 0 123 45 v g (v) i d (a) v g =v d r ds(on) vs. v g 0 20 40 60 80 100 0246810 v g (v) r ds(on) (m ? ) 5a 15a 10a normalized r ds(on) 0 1 2 3 0 5 10 15 20 25 30 i d (a) r ds(on) /r ds(on) at gate = 10 v 3.5v 4v 4.5v 5v 6v 10v forward characteristics 0 5 10 15 20 25 30 012345 v d (v) i d (a) 10v 6v 5v 4.5v 4v 3.5v 3v 2v AAT9560 30v n-channel power mosfet 9560.2003.08.0.91 3
ordering information note: sample stock is generally held on all part numbers listed in bold . note 1: xyy = assembly and date code. package information sc70jw-8 all dimensions in millimeters. 0.225 0.075 0.45 0.10 0.05 0.05 2.10 0.30 2.00 0.20 7 3 4 4 1.75 0.10 0.85 0.15 0.15 0.05 1.10 max 0.100 2.20 0.20 0.048ref 0.50 bsc 0.50 bsc 0.50 bsc package marking 1 part number (tape and reel) sc70jw-8 ckxyy AAT9560ijs-t1 AAT9560 30v n-channel power mosfet 4 9560.2003.08.0.91 advanced analogic technologies, inc. 830 e. arques avenue, sunnyvale, ca 94085 phone (408) 737-4600 fax (408) 737-4611 analogictech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an analogictech pr oduct. no circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. analogictech reserves the right to make changes to their products or specifications or to discontinue any product or service wi thout notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. all products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of l iability. analogictech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accorda nce with analogictech?s standard warranty. testing and other quality control techniques are utilized to the extent analogictech deems necessary to support this warranty. specific tes ting of all parameters of each device is not necessarily performed.
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